Non-lithographic Fabrication of Ni-se Heterojunction Nanowires and their Electrical Characterization

In this paper, heterojunction nanowires of Ni-Se are fabricated via template-assisted electrodeposition process. Nanowires are characterized by scanning electron microscopy (SEM), Energy dispersive X-Ray Spectroscopy (EDS), X-ray diffractometry and electrical transport studies. SEM photographs reveal the uniform and dense growth of Ni-Se nanowires. X-ray diffraction pattern shows the crystalline nature of Ni-Se nanowires. EDS spectrum shows the much higher percentage of Ni as compared to Se. A collective current-voltage characteristic of heterojunction nanowires shows the resonant tunneling diodes (RTDs) like behavior with peak to valley current ratio 1.37 at room temperature.