Analysis of a Graphene FET-Based Frequency Doubler for Combined Sensing and Modulation through Compact Model Simulation

The ambipolar conduction property of graphene field-effect transistors (GFETs) and the inherent square-like dependence of the drain current on the gate voltage, enable the development of single-device architectures for analog nonlinear radiofrequency (RF) circuits. The use of GFETs in novel RF component topologies allows leveraging graphene’s attractive thermal and mechanical properties to improve the miniaturization and weight reduction of electronic components. These features are specifically appealing for integrated sensing, modulation, and transmission systems. However, given the innovative nature of emerging graphene-based technology, a complete performance analysis of any novel electronic component is essential for customizing the operating conditions accordingly. This paper presents a comprehensive circuital analysis of a GFET-based frequency doubler, exploiting a compact model for GFET circuit simulation to assess the device’s performance parameters, including power conversion gain bandwidth and saturation. The performed analysis proposes to support the design of GFET-based harmonic transponders, offering integrated sensing and signal manipulation capabilities.