Synthesis and Microwave Dielectric Properties of Tin-Doped Barium Titanate Ceramics

Tin- Doped Barium Titanate Ceramics is a multiferroic substance that displays an important role in electronic devices. Manufacturing of energy storage devices with good efficiency and fewer losses has been a distinct topic. In the current study, Solid solution of Tin-doped Barium Titanate substitution with (x = 0, 0.5) synthesized through mixed oxide conventional technique and calcined at 800°C temperature for 3h with heating/cooling at rate 5˚C/min. The structural, optical, and microwave dielectric properties were studied by SEM (Scanning electron microscopy) X-ray diffraction, photoluminescence spectroscopy, Fourier transform infrared, and vector network analyzer, respectively. X-ray diffraction (XRD) study shows that the crystal phase structure, hkl planes, the lattice constant, average crystallite size, and volume unit cell of Tin- Doped Barium Titanate. XRD shows grain size reduces with increasing Sn4+ content. An intense and broadband spectrum was observed at around the red color emission region. Optimum dielectric properties i.e. high dielectric constant (ϵr = 40.5), high quality factor (Q = 13,106) and low dielectric loss (0.00013) at 0.15 GHz frequency have been observed. The SEM image shows an inhibited grain growth with an increase of Sn4+ content. The results demonstrate that it is the possibility of tuning Ba(Ti1-xSnx)O3 optic and microwave dielectric properties by doping different concentrations of Tin nanoparticles.